|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Silicon Flip Chip PIN Diode V 3.00 MA4FCP305 Features n n n n n n n 1269 Outline Drawing Top View A Low Series Resistance : 1.7 Low Capacitance : 50 fF Fast Switching Speed : 20 nS Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion Rugged by Design B F Description M/A-COM's MA4FCP Series consists of Silicon Flip Chip PIN diodes fabricated with M/A-COM's patented HMIC process. This diode is fabricated on epitaxial wafers using a process designed for repeatable electrical characteristics and extremely low parasitics. This diode is fully passivated with Silicon Nitride and has an additional layer of Polyimide for scratch protection. These protective coatings prevent damage to the junction during automated or manual handling. This flip chip configuration is suitable for pick and place insertion. Side View D E D C Bottom View Applications The small 0315 outline and low 0.085 pS RC product, make the device useful for multi-throw switch and switched phase shifter circuits requiring < 20 nS switching speeds up to 18 GHz operating frequency. Cathode Mark Nominal Die Dimensions Absolute Maximum Ratings @ 25 C1 Parameter Forward Current Reverse Voltage Operating Temperature Storage Temperature Dissipated Power Mounting Temperature Value 100 mA -40 V -55 C to +150 C -55 C to +150 C 230 mW +300 C for 10 seconds Inches Millimeters Dim A B C D E F Min 0.0269 0.0135 0.0040 0.0041 0.0124 0.0069 Max 0.0289 0.0155 0.0080 0.0061 0.0144 0.0089 Min 0.683 0.343 0.102 0.105 0.315 0.175 Max 0.733 0.393 0.203 0.155 0.365 0.225 1. Exceeding any of these values may result in permanent damage Silicon Flip Chip PIN Diode Electrical Specifications @ TA = + 25 C Parameters @ Conditions Total Capacitance @ -10 V, 1 MHz1 Total Capacitance @ -10 V, 1 GHz1,3 Series Resistance @ +50 mA2,3 , 100 MHz Series Resistance @ +50 mA2,3 , 1 GHz Forward Voltage @ +100 mA Reverse Voltage @ -10 A Reverse Current @ -40 V 50 - 90% Lifetime @ +10 mA / -6 mA Steady State Thermal Resistance4 MA4FCP305 V 3.00 Symbol CT CT RS RS VF VR IR TL Units pF pF V V A ns C/W Min. Typ. 0.060 0.050 1.7 2.1 1.05 Max. 1.25 -40 -50 10 25 640 1. 2. 3. 4. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance, Cp. Series resistance RS is equivalent to the total diode series resistance including the junction resistance Rj. Rs and Cp measured on an HP4291A with die mounted in an ODS-186 package. Steady-state thermal resistance measured with die mounted in an ODS-186 package. Assembly Considerations The following precautions should be observed for successful assembly of the die. Mounting Techniques These devices were designed for insertion onto hard or soft substrates with the junction side down. They can be mounted with electrically conductive epoxy or with a low temperature solder preform. The die can also be assembled with the junction side up, and wire or ribbon bonds made to the pads. Cleanliness These chips should be handled in a clean environment. Do not attempt to clean die after installation. ESD These devices very susceptible to ESD and are rated Class 0 (0-199 V) per HBM MIL-STD-883, method 3015.7 [C = 100 pF 10%, R = 1.5k 1%]. Even though tested die pass 100 V ESD, they must be handled in a static-free environment Solder Die Attach Using Electrically Conductive Ag Epoxy and Solder These chips are designed to be inserted onto hard or soft substrates with the junction side down. They should be mounted onto silkscreened circuits using Electrically Conductive Ag Epoxy, approximately 1-2 mils in thickness and cured at approximately 90 C to 150 C per manufacturer's schedule . For extended cure times >30 minutes, temperatures must be below 200 C. Sn Rich Solders are not recommended due to the Tungsten Metallization scheme beneath the gold contacts. Indalloy or 80 Au/20 Sn Solders are acceptable. Maximum soldering temperature must be <300 C for <10 sec. General Handling The protective polymer coating on the active areas of these devices provides scratch protection, particularly for the metal airbridge that contacts the anode. Die can be handled with tweezers or vacuum pickups and are suitable for use with automatic pick-and-place equipment. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Silicon Flip Chip PIN Diode Circuit Mounting Dimensions (Inches) MA4FCP305 V 3.00 0.013 0.012 (2) PL 0.008 (2) PL Ordering Information Part Number MA4FCP305 MADP00716101269 MA4FCP305-W Package Die in Carrier Tape/Reel Wafer on Frame 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 |
Price & Availability of MADP00716101269 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |